所屬科目:研究所、轉學考(插大)◆電子學
1. Determine Vo and io in the circuit shown in Fig 1.(20%)
2. Determine Vo in the circuit shown in Fig 2.(13%)
(a) 0.15 mA,
(b) 1.5 mA,
and(c) 15 mA.(18%)
4. Assuming n = 2, find the value of the diode small-signalresistance rd at bias currents of
5. For the circuit in Fig. 3, select a value for “RE” so that thetransistor saturates with a forced β of 35. Assuming VEB = 0.7V and VEC,sat = 0.2 V. (10%)
(a)What is the type of transistors used, PMOS or NMOS?Design the W/L ratio of each
(b) Q1,
(c) Q2, and
(d) Q3 MOSFETs, such that the source voltage V1 of the transistor Q1 is+1 V and source voltage V2 of the transistor Q2 is -1 V.