8. Why is the device dimension of BJT not shown in current \( I_C \) but the device dimension W/L is included in current \( I_D \) of MOSFET? (10%)
(\( I_C=I_S \exp (V_{BE}/V_T) \), \( I_D=(1/2)(\mu_n C_{ox})(W/L)(V_{GS}-V_{TH})^2 \).)